Deep-level defects in silicon and the band-edge hydrostatic deformation potentials

Evidence for an energy reference level based on substitutional transition-metal defect levels in semiconductors is presented and used to obtain the values for the band-edge hydrostatic deformation potentials in silicon. From the pressure derivatives of Pt and Pd acceptors in silicon we derive values of ${\Xi }_d=-0.5\mathrm{}$ eV and $a_v=+0.9\mathrm{}$ eV. These values are consistent with recent theoretical calculations and with the analysis of acoustic-phonon-limited electron and hole mobility.