Zn-doped vapor-grown InP
- 1 January 1980
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (1) , 815-817
- https://doi.org/10.1063/1.327303
Abstract
Zinc‐doped p‐type InP layers has been grown by the In/PCl3/H2 technique. It has been shown that the zinc atoms, incorporated during the growth, become electrically active after annealing. By photoluminescence study at 4.2 °K, it has been found that the main transition on the Zn level, in low‐doped material, was situated at 1.377 eV; this transition shifts to 1.382 eV in higher‐doped material.This publication has 9 references indexed in Scilit:
- Low-threshold 1.25-μm vapor-grown InGaAsP cw lasersApplied Physics Letters, 1979
- n -channel inversion-mode InP m.i.s.f.e.t.Electronics Letters, 1978
- Room-temperature operation of lattice-matched InP/Ga0.47In0.53As/InP double-heterostructure lasers grown by MBEApplied Physics Letters, 1978
- Electrical measurements on homogeneous diffused p-type InPJournal of Physics D: Applied Physics, 1977
- p−InP/n−CdS solar cells and photovoltaic detectorsApplied Physics Letters, 1975
- Liquid Phase Epitaxy of InPJournal of the Electrochemical Society, 1974
- Indium PhosphideJournal of the Electrochemical Society, 1973
- Free and bound electron transitions to acceptors in indium phosphideSolid State Communications, 1972
- The photoluminescence spectrum of bound excitons in indium phosphide and gallium arsenideJournal of Physics C: Solid State Physics, 1972