Enhanced radiation hardness of quantum dot lasersto highenergy proton irradiation
- 1 February 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (3) , 174-175
- https://doi.org/10.1049/el:20010118
Abstract
The influence of high energy proton irradiation on the device properties of InGaAs/GaAs quantum dot and quantum well lasers has been investigated. In the regime of spontaneous emission, quantum dot lasers show a much enhanced radiation hardness compared to quantum well lasers, manifested in a smaller increase of threshold current density. However, in the lasing regime the device characteristics are similarly influenced. Internal differential quantum efficiencies are reduced, internal optical losses remain constant.Keywords
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