Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots
- 10 April 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (15) , 2074-2076
- https://doi.org/10.1063/1.126259
Abstract
The photoluminescence(PL) emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation-induced changes in photocarrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined.Keywords
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