High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochralski Silicon
- 1 September 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (9A) , L1217
- https://doi.org/10.1143/jjap.36.l1217
Abstract
The crystal originated particles (COP's) as revealed by light scattering tools on Czochralski silicon wafer surfaces are investigated by means of high resolution transmission electron microscopy (HREM) on specimens prepared by a focused ion beam tool. The structure imaging of buried defects gives direct evidence for the void nature of the defects leading to the formation of the COP's.Keywords
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