A low-noise and wide-bandwidth InGaAs/InAlAs superlattice APD
- 7 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 725-728
- https://doi.org/10.1109/iedm.1989.74157
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Electron and hole impact ionization rates in InP/Ga0.47In0.53As superlatticeIEEE Journal of Quantum Electronics, 1986
- Impact ionization coefficients of electrons and holes inIEEE Journal of Quantum Electronics, 1985
- Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N-n heterojunction by C-V profilingApplied Physics Letters, 1983