Effects of Impurities on the Radiation Damage and Annealing Behavior of Si Solar Cells

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Abstract
The reduction of minority carrier lifetime by γ-irradiation is strongly dependent on the sample type P/N or N/P, and the effect of chemical impurities such as Cu and Ni on radiation resistance is rather remarkable in N/P-type than in P/N-type samples. Introduction rate of defects for P/N and N/P-type cells contaminated with impurities decreases to about 1/2 and 1/7 of non-contaminated cell's, respectively. In N/P-type cells, the increase in short-circuit current under γ-irradiation is observed, and is due to an improvement of V-I characteristics. The isochronal annealing behavior of cells is also strongly dependent on the sample type. Annealing temperature for P/N-type cells contaminated with chemical impurity is lower than that for non-contaminated P/N-type. Impurity-contaminated cells showed a remarkable increase in unannealed fraction of short-circuit current over the temperature range of 180°C–200°C. For N/P-type cells, an abrupt increase in unannealed fraction is observed at about 120°C for both Cu-contaminated and non-contaminated cells.

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