Low temperature pseudomorphic growth of Ge on Si(100)-(2 × 1)
Open Access
- 31 August 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 113 (1-2) , 45-52
- https://doi.org/10.1016/0022-0248(91)90007-r
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Ab Initio Study of Elementary Processes in Silicon Homoepitaxy–Adsorption and Diffusion on Si(001)Japanese Journal of Applied Physics, 1990
- Step stability, domain coverage, and nonequilibrium kinetics in Si(001) molecular-beam epitaxyPhysical Review B, 1990
- Epitaxial growth of silicon on Si(001) by scanning tunneling microscopyJournal of Vacuum Science & Technology A, 1990
- Dimer strings, anisotropic growth, and persistent layer-by-layer epitaxyPhysical Review B, 1989
- Anisotropic spread of surface dimer openings in the initial stages of the epitaxial growth of Si on Si{100}Physical Review Letters, 1989
- Structural properties of heteroepitaxial Ge films on a Si(100)-2×1 surfaceJournal of Applied Physics, 1988
- Heteroepitaxial growth of Ge films on the Si(100)-2×1 surfaceJournal of Applied Physics, 1985
- Lattice-Location Experiment of the Ni-Si Interface by Thin-Crystal Channeling of Helium IonsPhysical Review Letters, 1981
- Use of Thin Si Crystals in Backscattering-Channeling Studies of the Si-SiInterfacePhysical Review Letters, 1978