Annealing study of the electron-irradiation-induced defectsandin InP: Defect transformation (-)→
- 15 January 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (2) , 1028-1037
- https://doi.org/10.1103/physrevb.41.1028
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Room-Temperature Annealing Effects on Radiation-Induced Defects in InP Crystals and Solar CellsJapanese Journal of Applied Physics, 1986
- Nonradiative-recombination-enhanced defect-structure transformation in low-temperature-ray-irradiated InPPhysical Review B, 1986
- Threshold energy for atomic displacement in InPPhysical Review B, 1986
- Effects of impurities on radiation damage in InPJournal of Applied Physics, 1986
- A model of deep center formation and reactions in electron irradiated InPJournal of Applied Physics, 1986
- Injection-enhanced annealing of InP solar-cell radiation damageJournal of Applied Physics, 1985
- Defect reactions on the phosphorus sublattice in low-temperature electron-irradiated InPPhysical Review B, 1985
- Recombination enhanced defect annealing in n-InPApplied Physics Letters, 1984
- Energy and orientation dependence of electron-irradiation-induced defects in InPPhysical Review B, 1984
- Defects in low temperature electron irradiated InPSolid State Communications, 1984