A model of deep center formation and reactions in electron irradiated InP
- 15 July 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (2) , 595-601
- https://doi.org/10.1063/1.337453
Abstract
We present a model of the production of deep centers and their reactions following electron irradiations in InP. We propose that the dominant hole traps in p-InP and electron traps in p+n InP junctions are complexes between shallow acceptors and a common intrinsic entity, the phosphorus interstitial or vacancy. The reactions observed below and above room temperature are then due to a local mobility of this entity, which can be obtained as well by thermal as by electronic stimulation of the reactions. This model implies the long-range migration (at least down to 16 K) of this entity, and explains the strongly different behavior of n-InP compared to p-InP samples.This publication has 24 references indexed in Scilit:
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