A manufacturing sensitivity analysis of 0.35 μm LDD MOSFET's
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Semiconductor Manufacturing
- Vol. 7 (1) , 53-59
- https://doi.org/10.1109/66.286828
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Process analysis using RSM and simulationMicroelectronic Engineering, 1992
- Integrated circuit design for manufacturing through statistical simulation of process stepsIEEE Transactions on Semiconductor Manufacturing, 1992
- An efficient methodology for building macromodels of IC fabrication processesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1989
- Using simulators to model transmitted variability in IC manufacturingIEEE Transactions on Semiconductor Manufacturing, 1989
- Application of statistical design and response surface methods to computer-aided VLSI device designIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
- A New Design-Centering Methodology for VLSI Device DevelopmentIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1987
- Use of Half-Normal Plots in Interpreting Factorial Two-Level ExperimentsTechnometrics, 1959