Electromigration Failure and Mechanical Stress in thin Film Conductors
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Stress-migration related electromigration damage mechanism in passivated, narrow interconnectsApplied Physics Letters, 1991
- Interaction between electromigration and mechanical-stress-induced migration; New insights by a simple, wafer-level resistometric techniqueIEEE Transactions on Electron Devices, 1991
- The effects of defects on the early failure of metal interconnectsIEEE Transactions on Reliability, 1990
- The Distribution of Electromigration Failures8th Reliability Physics Symposium, 1986
- The role of metal and passivation defects in electromigration-induced damage in thin film conductorsThin Solid Films, 1982
- Stress generation by electromigrationApplied Physics Letters, 1976
- Electromigration in thin aluminum films on titanium nitrideJournal of Applied Physics, 1976
- Effect of High Pressure on the Thermoelectric Power and Electrical Resistance of Aluminum and GoldPhysical Review B, 1968
- Effect of pressure on mobility of interstitial carbon in ironJournal of Physics and Chemistry of Solids, 1962
- Pressure Effect on Vacancy Migration Rate in GoldPhysical Review B, 1961