New plasma deposition process of amorphous GaxAs1−x in an r.f. capacitively coupled diode system
- 1 December 1986
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 145 (2) , 233-240
- https://doi.org/10.1016/0040-6090(86)90372-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Recollections and reflections of MO-CVDJournal of Crystal Growth, 1981
- Plasma polymerization of fluorocarbons in rf capacitively coupled diode systemJournal of Vacuum Science and Technology, 1981
- Amorphous GaAs Films by Molecular Beam DepositionJapanese Journal of Applied Physics, 1980
- Effect of vacancies on electrical and optical properties of amorphous gallium arsenide filmsJournal of Non-Crystalline Solids, 1974