Metal-oxide-semiconductor field-effect transistors fabricated using self-aligned silicide technology
- 1 September 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (5) , 527-529
- https://doi.org/10.1063/1.96115
Abstract
N- and p-channel metal-oxide-semiconductor field-effect transistors have been fabricated with self-aligned WSi2 source, WSi2 drain, and WSi2/polycrystalline-silicon gate. Ion beam mixing and rapid thermal annealing techniques were employed to form smooth WSi2 films selectively on the device area and to simultaneously form shallow source and drain p-n junctions. Good electrical characteristics were obtained for both n- and p-channel devices, which have a gate length of 1.5 μm.Keywords
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