Anisotropic phenomena in GaAs growth processes in vapour deposition systems
- 1 February 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 66 (1) , 71-84
- https://doi.org/10.1016/0040-6090(80)90073-5
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Theoretical analysis of equilibrium adsorption layers in CVD systems (Si-H-Cl, Ga-As-H-Cl)Journal of Crystal Growth, 1978
- Growth kinetics and capture of impurities during gas phase crystallizationJournal of Crystal Growth, 1977
- Influence of the Growth Parameters in GaAs Vapor Phase EpitaxyJournal of the Electrochemical Society, 1977
- A theoretical treatment of GaAs growth by vapour phase transport for {001} orientationJournal of Crystal Growth, 1975
- Étude de l'anisotropie de la croissance épitaxiale de GaAs en phase vapeurJournal of Crystal Growth, 1972
- Nucleation of epitaxial films at chemical growthThin Solid Films, 1969
- Influence of Substrate Temperature on GaAs Epitaxial Deposition RatesJournal of the Electrochemical Society, 1968
- Epitaxial Deposition of GaAs in an Argon AtmosphereJournal of the Electrochemical Society, 1967
- The Effect of Orientation on the Electrical Properties of Epitaxial Gallium ArsenideJournal of the Electrochemical Society, 1964
- Vapor Growth of Gallium ArsenideJournal of the Electrochemical Society, 1961