Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in GaxIn1−xAs
- 15 January 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (2) , 827-829
- https://doi.org/10.1063/1.348919
Abstract
The band gap and the intrinsic carrier concentration in a semiconductor are important material parameters needed in the interpretation of various experimental and theoretical data. In the present work, empirical expressions for both the parameters as a function of alloy composition x and temperature are proposed for GaxIn1−xAs. The calculated results for band gap are in close agreement with the available data, while the same for intrinsic concentration give fair agreement with the data at the two ends of the alloy composition.This publication has 9 references indexed in Scilit:
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