Raman scattering of coupled longitudinal optical phonon-plasmon modes in dry etched n+-GaAs
- 15 April 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (8) , 3754-3759
- https://doi.org/10.1063/1.350885
Abstract
We have carried out extensive Raman scattering investigations of the damage caused by the dry etching in GaAs. The heavily doped n+-GaAs (2–3×1018 cm−3) allows the study of the coupled longitudinal optical (LO) phonon-plasmon mode as a probe to assess the dry etch-induced damage. Three etching techniques were used including conventional radio frequency (rf) reactive ion etching (RIE), ion beam etching (IBE), and electron cyclotron resonance radio frequency reactive ion etching (ECR-RIE). It is demonstrated that the etched damage is confined to a few tens of nanometers after 20 nm of material is etched away. ECR-RIE etching produces the smallest damage. It is found that in RIE etching, as etching proceeds, the depletion depth saturates while for purely physical etching (IBE) the depletion depth increases continuously, at least under the conditions used.This publication has 19 references indexed in Scilit:
- The one phonon Raman spectrum in microcrystalline siliconPublished by Elsevier ,2002
- XPS studies of contamination of reactor and silicon surfaces caused by reactive ion etchingSemiconductor Science and Technology, 1991
- Dry etch damage and its effect on electronic and optical nanostructuresSuperlattices and Microstructures, 1990
- Energy dependence and depth distribution of dry etching-induced damage in III/V semiconductor heterostructuresJournal of Vacuum Science & Technology B, 1989
- Comparison of damage in the dry etching of GaAs by conventional reactive ion etching and by reactive ion etching with an electron cyclotron resonance generated plasmaJournal of Vacuum Science & Technology B, 1989
- Raman Scattering of Reactive-ion Etched GaAsJournal of Modern Optics, 1988
- Electrical damage induced by ion beam etching of GaAsJournal of Vacuum Science & Technology B, 1988
- Reactive ion etching of GaAs using a mixture of methane and hydrogenElectronics Letters, 1987
- Resonant two-phonon Raman scattering in GaAs: A sensitive probe for implantation damage and annealingApplied Physics Letters, 1987
- Effects of As+ ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretationApplied Physics Letters, 1984