Tem and Hrem Study Of mGH-Temperature Aluminum Ion Implantation to 6H-SiC
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
6H silicon carbide wafers were implanted with 40–50 keV aluminum ions to a dose of 1.5 × 1014 – 1.5 × 1016 cm−2 at high temperatures (1100°C–1700°C). The substrate temperature and the implantation dose were varied to investigate the influence of the implantation parameters on the formation of structural defects. Conventional transmission electron microscopy (TEM) and high resolution electron microscopy (HREM) techniques were applied to study the defects. We found that for low dose implants {0001} interstitial dislocation loops are formed but for high dose implants aluminum precipitates associated with {0001} half-loops are formed.Keywords
This publication has 2 references indexed in Scilit:
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- HREM study of ion implantation in 6H-SiC at high temperaturesJournal of Electron Microscopy, 1997