Reactants in SiC chemical vapor deposition using CH3SiH3 as a source gas
- 2 January 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 147 (1-2) , 111-116
- https://doi.org/10.1016/0022-0248(94)00656-3
Abstract
No abstract availableKeywords
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