Contacts to monocrystalline n- and p-type silicon by wafer bonding using cobalt disilicide
- 1 January 1994
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. T54, 77-80
- https://doi.org/10.1088/0031-8949/1994/t54/018
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Buried Schottky Contacts in Patterned Cobalt Silicide Layers in Silicon Using Wafer BondingMRS Proceedings, 1994
- Boron Redistribution During Formation of Cobalt SilicidesMRS Proceedings, 1992
- Platinum silicide fusion bondingElectronics Letters, 1991
- The diffusion of elements implanted in films of cobalt disilicideJournal of Applied Physics, 1988