Electrical and optical properties of Mg-, Ca-, and Zn-doped InP crystals grown by the synthesis, solute diffusion technique
- 15 May 1984
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (10) , 3779-3784
- https://doi.org/10.1063/1.332934
Abstract
p‐type InP crystals doped with Mg, Ca, and Zn have been grown by the synthesis, solute diffusion (SSD) technique. Distribution coefficients for the Mg and Ca in the SSD‐grown InP were determined to be 0.20 and 0.025, respectively. 4.2 K photoluminescence emission peaks have also been investigated for Mg‐, Ca‐, and Zn‐doped samples. The binding energy is determined to be EA (Mg)=40 meV, EA (Ca)=43 meV, and EA (Zn)=47 meV. Comparison of the emission peak energies between impurity‐doped and nominally‐undoped InP shows that Mg and Ca as well as Zn are incorporated as residual shallow acceptors in the high‐purity SSD‐grown InP (ND−NA ≤1015 cm−3 at 300 K).This publication has 20 references indexed in Scilit:
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