LEC growth of InGaAs bulk crystal fed with a GaAs source
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 112 (1) , 33-38
- https://doi.org/10.1016/0022-0248(91)90909-o
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- THM growth and properties of In1−xGaxP bulk materialJournal of Crystal Growth, 1989
- Growth of very thick In1-xGaxAs layers by source-current-controlled methodJournal of Crystal Growth, 1986
- Growth of GaAs1−xPx crystals by pulling from gallium-rich solutionsJournal of Crystal Growth, 1973
- Preparation and Properties of Bulk In[sub 1−x]Ga[sub x]As AlloysJournal of the Electrochemical Society, 1970