Growth of very thick In1-xGaxAs layers by source-current-controlled method
- 1 January 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 74 (1) , 39-47
- https://doi.org/10.1016/0022-0248(86)90246-0
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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