Critical-layer thickness of a pseudomorphic In0.8Ga0.2As heterostructure grown on InP
- 27 May 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (21) , 2420-2422
- https://doi.org/10.1063/1.104890
Abstract
A very high electron mobility pseudomorphic In0.8Ga0.2As heterostructure is successfully grown on InP both by the elimination of the overshoot of flux densities and by the precise control of the flux ratio through a new calibration technique of reflection high‐energy electron diffraction oscillations in a molecular beam epitaxy system. The critical‐layer thickness for the pseudomorphic growth of InGaAs on InP is found to follow the energy balance model, and a very high 2DEG mobility of over 1.5 m2/V s and over 15 m2/V s at 293 and 10 K, respectively, is obtained.Keywords
This publication has 5 references indexed in Scilit:
- AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBEIEEE Electron Device Letters, 1989
- Materials and Device Characteristics of Pseudomorphic AlGaAs-InGaAs-GaAs and AlInAs-InGaAs-InP High Electron Mobility TransistorsMRS Proceedings, 1989
- The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy qualityJournal of Applied Physics, 1988
- Elimination of the flux transients from molecular-beam epitaxy source cells following shutter operationJournal of Vacuum Science & Technology B, 1988
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985