Identification of acceptors and donors in high-purity InP grown by metalorganic chemical vapor deposition
- 1 February 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (3) , 1059-1062
- https://doi.org/10.1063/1.338198
Abstract
Photoluminescence at 1.9 K and far-infrared photoconductivity at 4.2 K reveal that Si and S are the predominant residual donors and Zn is the predominant acceptor in high-purity epitaxial InP grown by metalorganic chemical vapor deposition using triethylindium at temperatures from 575 to 700 °C. The epitaxial layers show 77 K electron Hall mobilities exceeding 100 000 cm2/V⋅s. Si accumulation near the epitaxial layer/substrate interface is revealed by far-infrared photoconductivity measurements. Although no residual C acceptor is observed in any samples, an unidentified acceptor called A1 is observed in samples grown at 700 °C.This publication has 8 references indexed in Scilit:
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