Influence of interface states on field effect and capacitance-voltage characteristics of metal/oxide/a-Si:H structures
- 30 November 1982
- journal article
- Published by Elsevier in Solar Energy Materials
- Vol. 8 (1-3) , 285-292
- https://doi.org/10.1016/0165-1633(82)90071-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Effect of annealing and light exposure on the field-effect density of states in glow-discharge a-Si: HPhilosophical Magazine Part B, 1982
- Theoretical Interpretations of the Gap State Density Determined from the Field Effect and Capacitance-Voltage Characteristics of Amorphous SemiconductorsJapanese Journal of Applied Physics, 1982
- Determination of the Density of State Distribution of a-Si:H by Isothermal Capacitance Transient SpectroscopyJapanese Journal of Applied Physics, 1981
- A Simple Scheme for Evaluating Field Effect DataPhysica Status Solidi (b), 1980
- Direct Measurement of the Bulk Density of Gap States in-Type Hydrogenated Amorphous SiliconPhysical Review Letters, 1980
- Analysis of field-effect and capacitance–voltage measurements in amorphous semiconductorsPhilosophical Magazine Part B, 1980
- Electronic density of states in discharge-produced amorphous siliconApplied Physics Letters, 1979
- Investigation of the density of localized states in a-Si using the field effect techniqueJournal of Non-Crystalline Solids, 1976
- Investigation of the localised state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966