Optical admittance spectroscopy: A new method for deep level characterization
- 1 April 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (7) , 2541-2545
- https://doi.org/10.1063/1.337930
Abstract
A new method for the optical cross-section measurement of deep levels in junctions is presented. It is based on the measurement of the capacitance and conductance of the junction under illumination, as a function of the photon energy hν and the frequency of the measuring signal. This technique has been applied to the measurement of the optical capture cross section σon of the Au acceptor level corresponding to the emission of electrons to the conduction band.This publication has 11 references indexed in Scilit:
- Thermal emission rates and capture cross-section of majority carriers at titanium levels in siliconSolid-State Electronics, 1983
- Fourier photo-admittance spectroscopyJournal of Applied Physics, 1982
- Deep-level optical spectroscopy in GaAsPhysical Review B, 1981
- Admittance spectroscopy: A powerful characterization technique for semiconductor crystals—Application to ZnTeSolid-State Electronics, 1980
- Complex nature of gold-related deep levels in siliconPhysical Review B, 1980
- Section de capture des trous sur le niveau Ev + 0,34 eV de Si : PtRevue de Physique Appliquée, 1980
- Spectroscopie de pieges dans des diodes electroluminescentes GaAlAsSolid State Communications, 1976
- Conductance and capacitance studies in GaP Schottky barriersJournal of Applied Physics, 1975
- Optical properties of gold acceptor and donor levels in siliconJournal of Applied Physics, 1974
- Admittance spectroscopy of deep impurity levels: ZnTe Schottky barriersApplied Physics Letters, 1972