Section de capture des trous sur le niveau Ev + 0,34 eV de Si : Pt
- 1 January 1980
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 15 (4) , 843-848
- https://doi.org/10.1051/rphysap:01980001504084300
Abstract
La section efficace de capture thermique des trous sur le centre à Ev + 0,34 eV associé au platine dans le silicium est déduite de la dépendance temporelle de la densité des centres profonds ionisés, mesurée par technique capacitive. Pour le domaine de température [77 K, 120 K], le résultat est $$
Keywords
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