Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfaces
- 1 September 1996
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 104-105, 354-358
- https://doi.org/10.1016/s0169-4332(96)00170-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Initial Stage of Oxidation of Hydrogen-Terminated Si(100)-2×1 SurfaceJapanese Journal of Applied Physics, 1995
- Oxidation Process of Hydrogen Terminated Silicon Surface Studied by Thermal Desorption SpectroscopyJapanese Journal of Applied Physics, 1991
- The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si SurfacesJapanese Journal of Applied Physics, 1990
- Control of the chemical reactivity of a silicon single-crystal surface using the chemical modification techniqueJournal of Applied Physics, 1990
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990
- Effects of surface hydrogen on the air oxidation at room temperature of HF-treated Si (100) surfacesApplied Physics Letters, 1990
- Initial stages of oxidation of Si{100}(2 × 1): A combined vibrational (EELS) and electron binding energy (XPS) studySurface Science, 1985
- Adsorption states and adsorption kinetics of atomic hydrogen on silicon crystal surfacesSurface Science, 1985
- Phonons in polysilane alloysPhysical Review B, 1982
- Dissociative chemisorption of H2O on Si(100) and Si(111) - a vibrational studySolid State Communications, 1982