Monolithic Wilkinson power divider on CMOS grade silicon with a polyimide interface layer for antenna distribution networks
- 1 January 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Antennas and Wireless Propagation Letters
- Vol. 2, 167-169
- https://doi.org/10.1109/lawp.2003.819043
Abstract
Using an optimized finite ground coplanar waveguide layout on a CMOS grade silicon wafer with a 20 μm thick polyimide interface layer and embedded passives, a Wilkinson power divider is built. The measured characteristics show an insertion loss of only 0.57 dB at 12.5 GHz and better than 15 dB return loss and isolation.Keywords
This publication has 7 references indexed in Scilit:
- Folded coplanar waveguide slot antenna on silicon substrates with a polyimide interface layerPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A Wilkinson power divider on a low resistivity Si substrate with a polyimide interface layer for wireless circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Microwave filters on a low resistivity Si substrate with a polyimide interface layer for wireless circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Measured Propagation Characteristics of Finite Ground Coplanar Waveguide on Silicon with a Thick Polyimide Interface LayerPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Coplanar waveguide transmission lines and highQ inductors on CMOS grade silicon using photoresist and polyimideElectronics Letters, 1999
- RF Transmission Lines on Silicon SubstratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1999
- A multiline method of network analyzer calibrationIEEE Transactions on Microwave Theory and Techniques, 1991