MEASUREMENT OF THE PHENOMENOLOGICAL ENERGY RELAXATION TIME IN n-Si AT 77°K LATTICE TEMPERATURE
- 1 December 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (11) , 382-383
- https://doi.org/10.1063/1.1652868
Abstract
We report the measurement of the phenomenological energy relaxation time for n‐Si at a lattice temperature of 77°K as a function of applied dc electric field. The computation is made using the dc current‐voltage characteristic of a sample oriented in the 〈111〉 crystallographic direction. The carriers in the ``warm'' electron region are assumed to be described by a Maxwellian distribution.Keywords
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