A 40-gb/s InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder Modulator with a drive Voltage of 2.3 V
- 27 December 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 17 (1) , 46-48
- https://doi.org/10.1109/lpt.2004.836900
Abstract
We have developed a traveling-wave Mach-Zehnder modulator using an n-i-n heterostructure fabricated on an InP substrate. We obtained an extremely small /spl pi/ voltage (V/spl pi/) of 2.2 V, even for a short signal-electrode length of 3 mm. We confirmed that the device has an impedance-matched electrode and operates at 40 Gb/s with a single-ended drive voltage of 2.3 V.Keywords
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