Effect of argon addition to SiCl4-H2 mixtures on the optical properties of glow discharge silicon films
- 1 July 1985
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 129 (3-4) , 217-226
- https://doi.org/10.1016/0040-6090(85)90048-3
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Optical absorption in hydrogenated microcrystalline siliconJournal of Physics C: Solid State Physics, 1983
- Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous SiliconPhysical Review Letters, 1981
- The role of argon involved in plasma-deposited amorphous Si:H filmsJournal of Non-Crystalline Solids, 1980
- Properties of amorphous Si:F:H alloysJournal of Non-Crystalline Solids, 1980
- Optical constants of rf sputtered hydrogenated amorphous SiPhysical Review B, 1979
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- A simple method for the determination of the optical constants n, k and the thickness of a weakly absorbing thin filmJournal of Physics E: Scientific Instruments, 1976
- Optical Constants of Epitaxial Silicon in the Region 1–3.3 eVPhysica Scripta, 1975
- Photoconductivity and optical properties of amorphous GeTeJournal of Non-Crystalline Solids, 1970
- Optical Properties and Electronic Structure of Amorphous GermaniumPhysica Status Solidi (b), 1966