Influence of N2 carrier gas on surface stoichiometry in GaN MOVPE studied by surface photoabsorption
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 301-304
- https://doi.org/10.1016/s0022-0248(98)00268-1
Abstract
No abstract availableKeywords
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