Observation of micro-defects in as-grown and heat treated Si crystals by infrared laser scattering tomography
- 1 January 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 94 (1) , 182-196
- https://doi.org/10.1016/0022-0248(89)90617-9
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Observation of Lattice Defects in GaAs and Heat-treated Si Crystals by Infrared Light Scattering TomographyJapanese Journal of Applied Physics, 1983
- The role of carbon in the precipitation of oxygen in siliconPhysics Letters A, 1981
- Detection of plate-like defects by light-scattering tomographyPhilosophical Magazine A, 1981
- A Study on Thermally Induced Microdefects in Czochralski-Grown Silicon Crystals : Dependence on Annealing Temperature and Starting MaterialsJapanese Journal of Applied Physics, 1980
- Observation of dislocations in a synthetic quartz crystal by light scattering tomographyPhilosophical Magazine A, 1980
- Observation of growth defects in synthetic quartz crystals by light-scattering tomographyJournal of Crystal Growth, 1978
- The Heterogeneous Precipitation of Silicon Oxides in SiliconJournal of the Electrochemical Society, 1974
- Refractive Index of SiliconApplied Optics, 1971
- Infrared Absorption and Electron Effective Mass in-Type Gallium ArsenidePhysical Review B, 1959
- Infrared Absorption in-Type SiliconPhysical Review B, 1957