A new DC model of HBT's including self-heating effect suitable for circuit simulators
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (12) , 2036-2042
- https://doi.org/10.1109/16.477758
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A Gummel-Poon model for single and double heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A large signal DC model for GaAs/Ga/sub 1-x/Al/sub x/As heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Experience with the new compact MEXTRAM model for bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Temperature dependence of DC currents in HBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Performance capabilities of HBT devices and circuits for satellite communicationIEEE Transactions on Microwave Theory and Techniques, 1992