Performance capabilities of HBT devices and circuits for satellite communication
- 1 June 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 40 (6) , 1205-1214
- https://doi.org/10.1109/22.141353
Abstract
No abstract availableKeywords
This publication has 51 references indexed in Scilit:
- A novel analytical approach for the nonlinear microwave circuits and experimental characterisation of the nonlinear behaviour of a new MESFET device structurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High-efficiency, class-B, S-band power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-performance carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by MOCVDElectronics Letters, 1991
- Electrical characterisation of the p-type dopant diffusion of highly doped AlGaAs/GaAs heterojunction bipolar transistors grown by MOCVDElectronics Letters, 1990
- Current-induced breakdown in p-type collector AlGaAs/GaAs HBTsIEEE Transactions on Electron Devices, 1990
- Mg-doped graded base GaAs/AlGaAs heterojuimction bipolar transistors grown by metalorganic vapour phase epitaxyElectronics Letters, 1990
- A new GaAs power MESFET structure for improved power capabilitiesIEEE Transactions on Microwave Theory and Techniques, 1989
- High-frequency performance limitations of millimeter-wave heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1988
- Electromigration-induced short-circuit failure in aluminum underlaid with chemically vapor deposited tungstenJournal of Applied Physics, 1988
- Improvement In AlGaAs/GaAs HBT power gains with buried proton-implanted layerElectronics Letters, 1986