Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy
- 1 May 2001
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 45 (5) , 711-715
- https://doi.org/10.1016/s0038-1101(01)00088-0
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxyApplied Physics Letters, 2000
- Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxyApplied Physics Letters, 2000
- Mobility of electrons in bulk GaN andheterostructuresPhysical Review B, 2000
- III–nitrides: Growth, characterization, and propertiesJournal of Applied Physics, 2000
- Low field electron mobility in GaNJournal of Applied Physics, 1999
- Nitride Semiconductors and DevicesPublished by Springer Nature ,1999
- Growth of gallium nitride by hydride vapor-phase epitaxyJournal of Crystal Growth, 1997
- Electron Hall mobility of n-GaNApplied Physics Letters, 1995
- Electron mobilities in gallium, indium, and aluminum nitridesJournal of Applied Physics, 1994
- Semiconductor PhysicsPublished by Springer Nature ,1982