Determination of valence-band discontinuity via optical transitions in ultrathin quantum wells
- 15 May 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (10) , 7259-7262
- https://doi.org/10.1103/physrevb.33.7259
Abstract
The energy separation (ΔE) between the heavy-hole and the light-hole subbands as a function of the well width for ultrathin quantum-well structures is calculated using a single-band particle-in-a-box model. It is found that the most sensitive range for the well width () to determine accurately the valence-band discontinuity (Δ) is between 15 and 80 Å whereas it is insensitive for >80 Å using optical transitions in quantum wells. A controversial issue for the determination of Δ can then be resolved by measuring the ΔE’s in the sensitive well-width range. Results for the GaAs- As system are presented and compared with the available experimental data in the sensitive range yielding good agreement with Dingle’s initial work.
Keywords
This publication has 26 references indexed in Scilit:
- Photoluminescence determination of well depth ofAs/AlAs in an ultrathin single quantum wellPhysical Review B, 1985
- A critical review of heterojunction band offsetsJournal of Vacuum Science & Technology B, 1985
- Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructuresPhysical Review B, 1985
- Determination of the conduction-band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance-voltage measurementsApplied Physics Letters, 1985
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- Microscopic study of semiconductor heterojunctions: Photoemission measurement of the valance-band discontinuity and of the potential barriersPhysical Review B, 1983
- Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N-n heterojunction by C-V profilingApplied Physics Letters, 1983
- Current Transport in Al/InAlAs/InGaAs HeterostructuresPhysica Status Solidi (a), 1982
- Measurement of isotype heterojunction barriers by C-V profilingApplied Physics Letters, 1980
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974