Strain compensation in ternary Si1 − x − yGexBy films
- 2 December 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 157 (1-4) , 181-184
- https://doi.org/10.1016/0022-0248(95)00405-x
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Effect of rapid thermal annealing on the strain relaxation in heavily boron doped silicon epitaxial layerJournal of Applied Physics, 1995
- Growth, electrical properties and reciprocal lattice mapping characterization of heavily B-doped, highly strained silicon-molecular beam epitaxial structuresJournal of Crystal Growth, 1994
- Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbonApplied Physics Letters, 1994
- Lattice distortion in a strain-compensated layer on siliconPhysical Review B, 1994
- Si1-x-yGexCy growth and properties of the ternary systemJournal of Crystal Growth, 1993
- Determination of the lattice contraction of boron-doped siliconJournal of Applied Physics, 1993
- Strain compensation by Ge in B-doped silicon epitaxial filmsJournal of Applied Physics, 1992
- Growth and strain compensation effects in the ternary Si1−x−yGexCy alloy systemApplied Physics Letters, 1992
- Modulation doping in GexSi1−x/Si strained layer heterostructuresApplied Physics Letters, 1984
- Effect of Free Carriers on Zone-Center Vibrational Modes in Heavily Doped-type Si. II. Optical ModesPhysical Review B, 1973