Low on-resistance power LDMOSFET using double metal process technology
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Intelligent power device having large immunity from transients in automotive applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Blanket LVD tungsten silicide technology for smart power applicationsIEEE Electron Device Letters, 1989
- High-performance vertical-power DMOSFETs with selectively silicided gate and source regionsIEEE Electron Device Letters, 1989
- A 30 A 30 V DMOS motor controller and driverIEEE Journal of Solid-State Circuits, 1988
- The design of a high power solid state automotive switch in CMOS-VDMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985