Photoelectron bandstructure of InP(110)-Sb monolayers
- 1 November 1991
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 3 (S) , S367-S372
- https://doi.org/10.1088/0953-8984/3/s/057
Abstract
The electronic bandstructure of an ordered 1*1 overlayer of Sb on InP(110) has been investigated by angle-resolved photoelectron spectroscopy using synchrotron radiation. The experimental energy dispersion of the features in the spectra has been mapped along high-symmetry directions in the surface Brillouin zone. An analysis based on a number of criteria is employed to distinguish surface-related features and these are compared with a 'tight-binding, total energy minimization' calculation based on a zig-zag chain model of Sb on the InP(110) surface. Two bands near the valence band maximum are found to be in reasonable agreement with predicted states with a bonding character associated with the adsorption on anion and cation sites. The nature of two further bands at higher binding energy is discussed.Keywords
This publication has 9 references indexed in Scilit:
- The growth of bismuth and antimony overlayers on InP(110)Journal of Vacuum Science & Technology B, 1990
- New surface atomic structures for column V overlayers on the (110) surfaces of III–V compound semiconductorsJournal of Vacuum Science & Technology B, 1990
- Bulk and surface electronic bands of InP(110) determined by angle-resolved photoemissionPhysical Review B, 1987
- Surface electronic structure of GaAs(110)1×1-Sb studied with angle-resolved photoelectron spectroscopyPhysical Review B, 1986
- Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structurePhysical Review B, 1985
- The electronic structure of cleaved indium phosphide (110) surfaces: experiment and theoryJournal of Physics C: Solid State Physics, 1983
- Electron states of an Sb-ordered overlayer on GaAs(110)Physical Review B, 1983
- Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)--Sb(1 ML)Physical Review B, 1982
- Angle‐Resolved Photoemission as a Tool for the Study of SurfacesAdvances in Chemical Physics, 1982