Surface electronic structure of GaAs(110)1×1-Sb studied with angle-resolved photoelectron spectroscopy

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Abstract
The ordered 1×1 overlayer of Sb on GaAs(110) has been studied with angle-resolved photoemission. The experimentally determined energy dispersions of three surface-state bands are compared with the results of previously reported theoretical calculations based on a surface model favored by low-energy electron diffraction analysis. Although there is a qualitative agreement between experiment and theory, the results suggest that a modification of the model is needed in order to obtain a better description of the GaAs(110)1×1-Sb surface.