Error analysis of high-frequency MOS capacitance calculations
- 31 May 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (5) , 447-456
- https://doi.org/10.1016/0038-1101(74)90074-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Exact frequency dependent complex admittance of the MOS diode including surface states, Shockley-Read-Hall (SRH) impurity effects, and low temperature dopant impurity responseSolid-State Electronics, 1973
- Exact analytical solution of high frequency lossless MOS capacitance-voltage characteristics and validity of charge analysisSolid-State Electronics, 1969
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Simple Physical Model for the Space-Charge Capacitance of Metal-Oxide-Semiconductor StructuresJournal of Applied Physics, 1964
- Semiconductor Surface VaractorBell System Technical Journal, 1962