Exact frequency dependent complex admittance of the MOS diode including surface states, Shockley-Read-Hall (SRH) impurity effects, and low temperature dopant impurity response
- 31 January 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (1) , 93-113
- https://doi.org/10.1016/0038-1101(73)90129-9
Abstract
No abstract availableKeywords
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