Positron diffusion in an electric field in Si
- 4 September 1989
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 1 (35) , 6315-6319
- https://doi.org/10.1088/0953-8984/1/35/030
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Defects and Impurities at the Si/Si(100) Interface Studied with Monoenergetic PositronsPhysical Review Letters, 1988
- Interaction of positron beams with surfaces, thin films, and interfacesReviews of Modern Physics, 1988
- Defect formation in H implantation of crystalline SiPhysical Review B, 1988
- SiO2/Si interface probed with a variable-energy positron beamApplied Physics Letters, 1987
- Positron diffusion in Mo: The role of epithermal positronsPhysical Review B, 1987
- High-intensity variable-energy positron beam for surface and near-surface studiesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Positron diffusion in SiPhysical Review B, 1985
- Diffusion of positrons to surfacesApplied Physics A, 1980
- Mobility of positrons in siliconPhysics Letters A, 1977