Schottky diode characteristics of Ti on strained-Si
- 31 December 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (12) , 1891-1893
- https://doi.org/10.1016/s0038-1101(97)00143-3
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- High speed p-type SiGe modulation-doped field-effect transistorsIEEE Electron Device Letters, 1996
- Electron transport properties of Si/SiGe heterostructures: Measurements and device implicationsApplied Physics Letters, 1993
- Electron transport in strained Si layers on Si1−xGex substratesApplied Physics Letters, 1993
- Electron transport properties of a strained Si layer on a relaxed Si1−xGex substrate by Monte Carlo simulationApplied Physics Letters, 1993
- High-transconductance n-type Si/SiGe modulation-doped field-effect transistorsIEEE Electron Device Letters, 1992
- Enhancement mode n -channel Si/SiGe MODFET with high intrinsic transconductanceElectronics Letters, 1992
- Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substratesApplied Physics Letters, 1991
- Anomalous strain relaxation in SiGe thin films and superlatticesPhysical Review Letters, 1991
- High electron mobility in modulation-doped Si/SiGeApplied Physics Letters, 1991
- Physics and applications of GexSi1-x/Si strained-layer heterostructuresIEEE Journal of Quantum Electronics, 1986