Some properties of gallium nitride films grown on (0 0 0 1) oriented sapphire substrates by gas source molecular beam epitaxy
- 1 September 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 180 (1) , 27-33
- https://doi.org/10.1016/s0022-0248(97)00165-6
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Direct imaging of impurity-induced Raman scattering in GaNApplied Physics Letters, 1996
- Raman scattering study of GaN filmsJournal of Applied Physics, 1996
- Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistorsIEEE Electron Device Letters, 1996
- Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodesApplied Physics Letters, 1996
- Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaNApplied Physics Letters, 1995
- InGaN/AlGaN blue-light-emitting diodesJournal of Vacuum Science & Technology A, 1995
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °CApplied Physics Letters, 1995
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- First-Order Raman Effect in Wurtzite-Type CrystalsPhysical Review B, 1969