High quality GaAs on Si using Si0.04Ge0.96/Ge buffer layers
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 489-493
- https://doi.org/10.1016/0022-0248(91)90508-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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