Substantiation of subplantation model for diamondlike film growth by atomic force microscopy

Abstract
Atomic force microscopy studies of films deposited from C+ ions are reported. For C+ energies E≥30 eV the films are diamondlike and retain the initial smoothness of the silicon substrate. For E<30 eV graphitic films evolve with the surface roughness increasing with decreasing C+ energy. It was further found that for 120 eV C+ deposition, at substrate temperatures Ts150 °C graphitic, rough films are produced. The results substantiate the subplantation model, manifesting the role of subsurface internal growth in diamondlike film formation.

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